smd type ic mosfet dip type ?? f e a tu r e s ?? v ds = 75 v ,rd s ( on ) = 0. 00 9 @ v g s = 1 0v ,id= 30 a ?? v ds = 75 v ,rd s ( on ) = 0. 01 1 @ v g s = 4 .5 v ,id= 20 a ?? a b so lu te m a xim u m ra tin g s t a = 2 5 ?? p ar am ete r s y mb o l rati ng u ni t dr ai n - s ou r c e v ol tag e v ds 75 v cont i nu ou s dr ai n cur r en t id 75 cont i nu ou s dr ai n cur r en t id 66 p u l s ed dr a i n cur r e nt* 1 idm 24 0 p o wer di s s i p ati on t a = 25 ?? p d 25 0 w g ate - to- s ou r c e v ol tag e v g s 20 v a v al an c he cur r e nt* 1 ia r 75 a repe ti t i v e a v a l an c h e e ne r gy * 1 e a r 28 0 mj j u nc ti o n- to- cas e r c 0. 6 j u nc ti o n- to- a m bi en t r a 62.5 o pe r ati ng j un c t i on an d s t or ag e t e mp er atu r e r an ge t j ,t s t g - 55 to + 17 5 ?? * a ?? /w 1 ? ? duty cycle 1 1 to-220 2 3 (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 1 gate 2 drain 3 source 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com smd type ic mosfet dip type 7 5 n 0 8 product specification
smd type ic mosfet dip type ?? e lec tr ica l ch a r a cte r is t ic s t a = 2 5 ?? p ar am et e r s y mb o l t e s t c o nd i to ns mi n t y p m ax un i t dr ai n- t o- s o ur c e b r ea k do wn v ol ta ge v ( b r) ds s v g s = 0 v , i d = 25 0 a 75 v s ta ti c dr a i n - to - s ou r c e o n- re s i s ta nc e rd s ( on ) v g s = 1 0v , i d = 3 0a 0. 00 9 g at e t hr es ho l d v ol t ag e v g s ( th ) v ds = v g s , id = 2 5 0 a 1 3 v f or war d t r an s c on d uc ta nc e gf s v ds = 1 5v , id = 3 0 a 30 s v ds = 6 0v , v g s = 0 v 1 v ds = 60 v , v g s = 0v , t j = 12 5 ?? 5 0 g at e- to - s ou r c e f or war d le ak ag e v g s = 2 0v 1 00 g at e- to - s ou r c e re v e r s e l ea k ag e v g s = - 20 v - 10 0 t ot a l g at e cha r g e q g 12 1 1 50 g at e- to - s ou r c e ch ar ge q gs 20 g at e- to - dr ai n cha r g e q g d 25 t ur n- o n del ay t i m e td ( on ) 11 2 0 ri s e t i m e tr 10 2 0 t ur n- o ff de l ay t i me td ( of f) 10 7 2 00 f al l t i me tf 22 4 0 in p ut ca pa c i t an c e ci s s 56 0 0 o ut pu t cap ac i ta nc e c os s 82 0 rev er s e t r an s fe r ca pa c i t an c e cr s s 27 5 con ti n uo us s ou r c e cu r r en t ? b od y di od e) is 7 5 p ul s ed s o ur c e cur r en t ? b o dy di o de ) * 1 i s m 2 40 di od e f o r wa r d v o l ta ge v s d t j = 25 ?? , if = 7 5 a , v g s = 0v * 1 1. 3 v rev er s e rec ov er y t i m e tr r t j = 25 ?? , if = 7 5 a 80 1 20 n s rev er s e rec ov er y c ha r ge q r r di /d t = 1 00 a / s * 1 0. 32 0. 54 uc * 1 p u l s e wi dt h ? 3 00 | s ; du ty c y c l e ? 2% . * 2 rep e ti t i v e r at i ng ; p ul s e wi d th l i m i te d by ax dr ai n- t o- s o ur c e le ak ag e cur r en t a n a ids s n s a ig s s pf nc v ds = 3 0 v , v g s = 10 v , i d = 7 5 a v dd = 3 0 v ? rl= 0 .4 ? id= 75 a ,v g e n= 10 v rg=2.5 v g s = 0 v , v ds = 2 5 v , f = 1 mhz 7 m mark ing mar king 75N08 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com smd type ic mosfet dip type 7 5 n 0 8 product specification
smd type ic mosfet dip type t y pical ch aracteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 0 10 1 10 1 10 2 v gs top: 15.0v 9.0v 7.5v 7.0v 6.5v 6.0v 5.5v 5.0v bottom : 4.5v * note : 1. 250 s pulse test 2. t c =25 0 c v ds , drain-source voltage [v] i d , drain current [a] 246810 1 10 100 * note : 1. v ds =40v 2. 250 s pulse test -55 0 c 25 0 c 150 0 c i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 150 175 200 0.007 0.008 0.009 0.010 0.011 0.012 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 25 0 c 150 0 c * note : 1. v gs =0v 2. 250 s pulse test i dr , reverse drain current [a] v ds , source-drain violtage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 37.5v v ds = 60v * note : i d = 75a v gs , gate-source voltage [v] q g , total gate charge [nc] 4008-318-123 sales@twtysemi.com 3 of 4 http://www.twtysemi.com smd type ic mosfet dip type 7 5 n 0 8 product specification
smd type ic mosfet dip type 7 5 n 0 8 t y pical ch aracteristics figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 37.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ? notes : 1 . z ?jc (t) = 1.1 0 c/w max. 2 . d u ty f a c to r, d = t 1 /t 2 3 . t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 4008-318-123 sales@twtysemi.com 4 of 4 http://www.twtysemi.com product specification
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